Abstract
Cubic boron nitride (cBN) has significant technological potential for use in high-temperature high-power electronic applications. And S and Zn were reported to be potential n-and p-type dopants. In this study, influences of vacancies, S and Zn impurity atoms on the electronic properties of cBN were investigated by first-principle approaches. The computation results are in good agreement with our experimental approach.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference18 articles.
1. N. Miyata, K. Moriki, O. Mishima, M. Fujisawa, T. Hattori, Optical constants of cubic boron nitride, Phys. Rev. B 40 (1989) 12028.
2. C.H. Lin, C.W. Liu. Metal-Insulator-Semiconductor Photodetectors. Sensors 10 (2010) 8797.
3. L.H. Chen, Development of III-V semiconductor FPA photodetectors of full optical spectrum. Infrared and Laser Engineering 37 (2008) 1.
4. A. Soltani, H.A. Barkad, M. Mattalah, B. Benbakhti, J.C. De Jaeger, Y.M. Chong, Y.S. Zou, W.J. Zhang, S.T. Lee, A. BenMoussa, B. Giordanengo, J.F. Hochedez, 193 nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors, Appl. Phys. Lett. 92 (2008).
5. S. Matsumoto, Z. Wenjun, Jpn. J. Appl. Phys. 39 (2000) L442.
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