Affiliation:
1. Université de Poitiers
2. CNRS
3. Institut d’Electronique de Microélectronique et de Nanotechnologie - UMR 8520
Abstract
We report on the mechanical response of semiconductor substructures formed by InP membranes bonded to silicon. The bonded surfaces are of the order of ~ 1 cm2 and were bonded using oxide-free direct wafer bonding. Both the plastic response of the InP membrane and the InP/Si interface strength have been investigated using instrumented nanoindentation.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science