Effect of Se Content in High-Cyanide Silver Plating Solution on {200} Crystal Plane Orientation Ratio of Electrodeposited Silver Layer

Abstract

Electrodeposited silver layers obtained from high-cyanide silver plating solution are widely applied for connectors and switches of automobiles. However, few groups have discussed the relationship between the crystal structure of silver layers and their properties. In this study, the effect of the concentration of Se, added as a brightener to high-cyanide silver plating solution, was investigated by XRD and EBSD analysis for electrodeposited silver layers with {200} orientation. By optimizing the concentration of Se in the silver plating solution, the {200} orientation ratio of the silver layer was increased to as high as 94%. Since the diffusion of Cu from the Cu substrate used in this study into the silver layer was inhibited, the silver layer with the high {200} orientation ratio exhibited good electrical contact resistance of the surface of 1.3mΩ after a heating test performed at 200°C for 74h. In addition, the silver layer had good bend formability. The results of XRD analysis confirmed that the recrystallization of the electrodeposited silver layer occurred at room temperature within several hours, thus increasing the {200} orientation ratio of the silver layer.