Abstract
Cu2ZnSnSe4 (CZTSe) thin films were grown on Corning glass 1737 by sequential methods
of sputtering deposition and selenization process. As-grown films showed that elemental Cu, Zn, and
Sn were in the nearly CZTSe stoichiometric ratio with Se-deficiency as detected by Energy Dispersive
X-Ray spectrometry (EDX). In order to attain film stoichiometry, as-deposited films were subjected
to selenization process in tube furnace under Ar ambient at different selenization temperatures for
10-60 min. It was found that compositions of binary compound in the sputtering target as well as
selenization are critical for the growth of the CZTSe films. The structural characteristics of the
selenized CZTSe films revealed a highly oriented stannite CZTSe phase with (112), (220/204) and
(312/116) growth orientations and a CuSe secondary phase. By using 0.5% KCN solution, CuSe
secondary phase could be totally etched from the CZTSe film surface.
Publisher
Trans Tech Publications, Ltd.
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