Affiliation:
1. National Academy of Sciences of Ukraine
2. Shizuoka University
Abstract
Different procedures of laser-induced doping of the surface region of semi-insulating CdTe semiconductor are discussed. CdTe crystals pre-coated with an In dopant film were subjected to irradiation with nanosecond laser pulses in different environments (vacuum, gas or water). The dopant self-compensation phenomenon was overcome under laser action and In impurity with high concentration was introduced in a thin surface layer of CdTe. In the case of a thick (300-400 nm) In dopant film, laser-induced shock wave action has been considered as the mechanism of solid-phase doping. Formed In/CdTe/Au diode structures showed high rectification depending on the fabrication procedure. Diodes with low leakage current were sensitive to high energy radiation.
Publisher
Trans Tech Publications, Ltd.
Reference10 articles.
1. T.E. Schlesinger and R.B. James, in: Semiconductors of Semimetals, edited by K. Willardson, A.C. Beer and E.R. Weber, Academic Press, San Diego (1995).
2. Cs. Szeles: Phys. Stat. Sol. B Vol. 241, No 3 (2004), p.783.
3. S. Del Sordo, L. Abbene, E. Caroli, A.M. Mancini, A. Zappettini and P. Ubertini: Sensors Vol. 9, Issue 5 (2009), p.3491.
4. H. Shiraki, M. Funaki, Y. Ando, A. Tachibana, S. Kominami and R. Ohno: IEEE Trans. Nucl. Sci. Vol. 56, No 4 (2009), p.1717.
5. U.V. Desnica: Prog. Cryst. Growth Charact. Mater. Vol. 36 (1998), p.291.
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