Piezoresponse Force Microscopy Study of Ferroelectric BaTiO<sub>3</sub> Thin Film Directly Deposited on Si(001) by Magnetron Sputtering-Reference-Cited by-同舟云学术

Piezoresponse Force Microscopy Study of Ferroelectric BaTiO₃ Thin Film Directly Deposited on Si(001) by Magnetron Sputtering

Published:2013-05 Issue: Volume:22 Page:23-30
ISSN:1661-9897
Container-title:Journal of Nano Research
language:
Short-container-title:JNanoR

Author:

Lu Hong Liang¹,Song Shuang Qi¹,Gu Xiao Feng²,He Shu Li³,Chen Chong Lin⁴,Song Gang Bing¹,Cai Zhong Hou⁵,Guo Hai Ming⁶,Gao Hong Jun⁶,Sun Li¹

Affiliation:

1. University of Houston

2. Jiangnan University

3. Capital Normal University

4. University of Texas at San Antonio

5. Argonne National Laboratory

6. Chinese Academy of Sciences

Abstract

Direct integration of ferroelectrics with semiconductors is critical to lower the cost and simplify the production procedures for data storage/processing components and miniature sensor/actuator development. By optimizing magnetron sputtering parameters, highly <001> preferential growth of BaTiO3 thin films with reproducible ferroelectric responses have been achieved on Si (001) substrates. The thin film ferroelectric characteristics were systematically studied by piezoresponse force microscopy, and a piezoelectric coefficient d33 of 24pm/V has been measured. It is found that the scanning tip sidewall angle and cantilever tilt affect the contour and size of polarized area.

Publisher

Trans Tech Publications, Ltd.

Link

https://www.scientific.net/JNanoR.22.23.pdf

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