Growth and Experimental Evidence of Quantum Confinement Effects in Cu2O and CuO Thin Films

Abstract

Thin Cu films of thickness 0.4 – 150 nm were deposited via radio frequency magnetron sputtering on Si(100) wafers, corning glass and quartz. Subsequently the Cu films were oxidized in ambient air at 230oC and 425oC in order to produce single-phase Cu2O and CuO, respectively. Selected samples were measured in the transmission geometry with the help of an ultraviolet – visible spectrophotometer. From the absorption spectra of the films, it was found that the gap EB for the dipole allowed transitions showed blue shifts of about 1.2 eV for the Cu2O thinnest film (0.75 nm), whereas the Edirect for the direct gap transitions showed blue shifts of about 0.16 eV for the CuO thinnest film (0.7 nm). The blue shift of the energy gap in the copper-oxide semiconductors is an indication of the presence of strong quantum confinement effects.