Hopping Conduction in Structures with Ge Nanoclusters Grown on Oxidized Si (001)
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Published:2016-02
Issue:
Volume:39
Page:178-188
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ISSN:1661-9897
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Container-title:Journal of Nano Research
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language:
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Short-container-title:JNanoR
Author:
Lysenko Vladimir1,
Gomeniuk Y.V.1,
Kudina Valeriya N.1,
Garbar Nikolay1,
Kondratenko Sergey2,
Melnichuk Yevgenij Ye.2,
Kozyrev Yurii N.3
Affiliation:
1. National Academy of Sciences of Ukraine
2. National Taras Shevchenko University of Kyiv
3. NAS of Ukraine
Abstract
Conductivity and capacitance in structures with Ge nanoclusters grown on oxidized Si (001) with different morphology have been investigated for the temperature range 120-290 K and frequencies 1 kHz-1MHz in co-planar geometry. It was found that structures exhibited T-1/3 conductivity dependence. The Mott’s variable range hopping through quasi-band of localized states at the Fermi level of Ge nanoclusters and their interfaces was found to be the dominant transport mechanism in the surface conductivity channel. The quasi-band width depends of surface morphology varying in the range 110-130 meV, while the middle of the band is located at Ev+140 meV. The peak of reduced conductivity and capacitance were observed under conditions when Fermi level is in the middle of this band.
Publisher
Trans Tech Publications, Ltd.