Numerical Study of Long Channel Carbon Nanotube Based Transistors by Considering Variation in CNT Diameter

Abstract

While much numerical studies have been done on short channel carbon nanotube field effect transistors (CNT-FETs), there are only a few numerical reports on long channel devices. Long channel CNT-FETs have been widely used in chemical sensors and biosensors as well as light emitters. Therefore, numerical study is helpful for a better understanding of the behavior of such devices. In this paper, we numerically analyze long-channel CNT-FETs by solving the continuity and charge equations self-consistently. To increase the accuracy of simulation, filed-dependent mobility is applied to the equations. Furthermore, a method is proposed to obtain the electrical current of transistors as a function of CNT diameter. Obtained results are in good agreement with the previous experimental data. It is found that compared to a CNT-based resistor, the dependence of current on diameter is much higher in a CNT-FET. Finally, reproducibility of transistors based on the arrays of random CNTs of 1-2 nm diameter in terms of the CNTs number is also investigated.