Transient-Enhanced Diffusion of Boron in SiC-Reference-Cited by-同舟云学术

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Transient-Enhanced Diffusion of Boron in SiC

Published:2000-05 Issue: Volume:338-342 Page:941-944
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Laube Michael¹,Pensl Gerhard²

Affiliation:

1. University of Erlangen-Nürnberg

2. Friedrich-Alexander-Universität Erlangen-Nürnberg

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.338-342.941.pdf

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structural characterization of the grown crystal/seed interface of physical vapor transport grown 4H-SiC crystals using Raman microscopy and x-ray topography;Journal of Crystal Growth;2019-06

2. Defects related to electrical doping of 4H-SiC by ion implantation;Materials Science in Semiconductor Processing;2018-05

3. Ion implantation technology for silicon carbide;Surface and Coatings Technology;2016-11

4. Electrical Activation of B⁺-Ions Implanted into 4H-SiC;Materials Science Forum;2010-04

5. SiC MATERIAL PROPERTIES;International Journal of High Speed Electronics and Systems;2005-12

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