Influence of Hydrostatic Pressure on Deep Levels in Silicon Induced by Annealing-Reference-Cited by-同舟云学术

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Influence of Hydrostatic Pressure on Deep Levels in Silicon Induced by Annealing

Published:1991-01 Issue: Volume:38-41 Page:231-236
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Smid V.,Zeman Jan¹,Kristofik J.,Mares J.J.,Vyzhigin Yu.V.,Kostylev V.A.,Sobolev N.A.²,Eliseev V.V.,Likunova V.M.

Affiliation:

1. High Magnetic Field Laboratory

2. Russian Academy of Sciences

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.38-41.231.pdf

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The effect of high hydrostatic pressure on DX centres in GaAs and GaAsP;Semiconductor Science and Technology;1991-10-01

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