Microstructural, Optical and Electronic Investigation of Anodized 4H-SiC

Author:

Zangooie S.1,Persson P.O.Å.1,Hilfiker J.N.2,Hultman L.1,Arwin H.1,Wahab Qamar-ul1

Affiliation:

1. Linköping University

2. J.A. Woollam Co., Inc.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Early Attainments of Porous Silicon Carbide Technology: a Bibliographic Digest;Reviews on advanced materials and technologies;2021

2. Effect of surfactant BAS on MoS2 codeposition behaviour;Journal of Applied Electrochemistry;2007-10-23

3. Carrier drift mobility in porous silicon carbide;Semiconductors;2004-09

4. Semi-insulating porous SiC substrates;Semiconductor Science and Technology;2003-05-13

5. Characterization of Porous SiC Substrates and of the Epilayer Structures Grown on Them;MRS Proceedings;2002

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