Microstructural, Optical and Electronic Investigation of Anodized 4H-SiC-Reference-Cited by-同舟云学术

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Microstructural, Optical and Electronic Investigation of Anodized 4H-SiC

Published:2000-05 Issue: Volume:338-342 Page:537-540
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Zangooie S.¹,Persson P.O.Å.¹,Hilfiker J.N.²,Hultman L.¹,Arwin H.¹,Wahab Qamar-ul¹

Affiliation:

1. Linköping University

2. J.A. Woollam Co., Inc.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.338-342.537.pdf

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Early Attainments of Porous Silicon Carbide Technology: a Bibliographic Digest;Reviews on advanced materials and technologies;2021

2. Effect of surfactant BAS on MoS2 codeposition behaviour;Journal of Applied Electrochemistry;2007-10-23

3. Carrier drift mobility in porous silicon carbide;Semiconductors;2004-09

4. Semi-insulating porous SiC substrates;Semiconductor Science and Technology;2003-05-13

5. Characterization of Porous SiC Substrates and of the Epilayer Structures Grown on Them;MRS Proceedings;2002

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