Enlargement of SiC Single Crystal: Enhancement of Lateral Growth using Tapered Graphite Lid-Reference-Cited by-同舟云学术

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Enlargement of SiC Single Crystal: Enhancement of Lateral Growth using Tapered Graphite Lid

Published:2000-05 Issue: Volume:338-342 Page:103-106
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Bahng Wook¹,Kitou Yasuo²,Nishizawa Shin Ichi³,Yamaguchi Hirotaka⁴,Khan Muhammad Nasir⁵,Oyanagi Naoki⁶,Arai Kazuo³,Nishino Shigehiro⁷

Affiliation:

1. Korea Electrotechnology Research Institute (KERI)

2. R&D Association for Future Electron Devices FED

3. National Institute of Advanced Industrial Science and Technology (AIST)

4. National Institute of Advanced Industrial Science and Technology AIST

5. Electrotechnical Laboratory

6. UPR Ultra-Low-Loss Power Device Technology Research Body

7. Dong-Eui University

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.338-342.103.pdf

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Quality Aspects for the Production of SiC Bulk Crystals;Materials Science Forum;2007-09

2. Effective increase of single-crystalline yield during PVT growth of SiC by tailoring of temperature gradient;Journal of Crystal Growth;2004-02

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