Structural and Morphological Characterization of Al/Ti-Based Ohmic Contacts on p-Type 4H-SiC Annealed Under Various Conditions
Author:
Affiliation:
1. Newcastle University
2. Foundation for Research and Technology-Hellas(FORTH)
3. Microelectronic Research Group (MRG)-IESL
4. Naval Research Laboratory
5. Ioffe Physicotechnical Institute RAS
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Link
https://www.scientific.net/MSF.338-342.1017.pdf
Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Ti/Al-based contacts to p-type SiC and GaN for power device applications;physica status solidi (a);2016-11-11
2. Influence of the anisotropy on the performance of D-band SiC IMPATT diodes;Applied Physics A;2014-10-24
3. Critical issues for interfaces to p-type SiC and GaN in power devices;Applied Surface Science;2012-08
4. Microstructure and Transport Properties in Alloyed Ohmic Contacts to P-Type SiC and GaN for Power Devices Applications;Materials Science Forum;2012-01
5. Mechanisms of current flow in metal-semiconductor ohmic contacts;Semiconductors;2007-11
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