Spectroscopic Investigation of Vanadium Acceptor Level in 4H and 6H-SiC
Author:
Affiliation:
1. INSA de Lyon - Domaine Scientifique de la Doua
2. INPG-ENSPG
3. UMR CNRS 5628, INP Grenoble-MINATEC
4. Université Pierre et Marie Curie
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Link
https://www.scientific.net/MSF.338-342.635.pdf
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Investigation of deep levels in semi-insulating vanadium-doped 4H-SiC by photocurrent spectroscopy;Physics Letters A;2021-07
2. A Study of Deep Defect Levels in Semi-Insulating SiC Using Optical Admittance Spectroscopy;Journal of Electronic Materials;2007-04-10
3. Vanadium donor and acceptor levels in semi-insulating 4H- and 6H-SiC;Journal of Applied Physics;2007-01
4. The Optical Admittance Spectroscopy of the Vanadium Donor and Acceptor Levels in Semi-Insulating 4H-SiC and 6H-SiC;Materials Science Forum;2006-10
5. A Study of V3+/4+ Levels in Semi-insulating 6H-SiC using Optical Admittance and Electron Paramagnetic Resonance Spectroscopies;MRS Proceedings;2006
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