Comparison of 4H-SiC pn, Pinch and Schottky Diodes for the 3 kV Range-Reference-Cited by-同舟云学术

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Comparison of 4H-SiC pn, Pinch and Schottky Diodes for the 3 kV Range

Published:2002-04 Issue: Volume:389-393 Page:1125-1128
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Peters Dethard¹,Friedrichs Peter²,Schörner Reinhold³,Stephani Dietrich³

Affiliation:

1. SiCED Electronics Development

2. Infineon Technologies AG

3. SiCED Electronics Development GmbH & Co. KG

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.389-393.1125.pdf

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Monolithically Integrated 4H-SiC MOSFET and JBS Diode (JBSFET) Using a Single Ohmic/Schottky Process Scheme;IEEE Electron Device Letters;2016-12

2. Promise and Challenges of High-Voltage SiC Bipolar Power Devices;Energies;2016-11-03

3. (Invited) Progress in Buried Grid Technology for Improvements in on-Resistance of High Voltage SiC Devices;ECS Transactions;2016-08-23

4. Temperature-Dependent Characteristics of 4H-SiC Buried Grid JBS Diodes;Materials Science Forum;2015-06

5. Evaluation of Buried Grid JBS Diodes;Materials Science Forum;2014-02

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