4H-SiC Material for Hall Effect and High-Temperature Sensors Working in Harsh Environments
Author:
Affiliation:
1. Université Montpellier 2
2. Université Montpellier 2 and CNRS
3. LETI-CEA Grenoble (Technologies Avancées)
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Link
https://www.scientific.net/MSF.389-393.1435.pdf
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Chloride-based fast homoepitaxial growth of 4H-SiC films in a vertical hot-wall CVD;Journal of Semiconductors;2016-06
2. Electrical resistivity and metal-nonmetal transition inn-type doped4H−SiC;Physical Review B;2006-12-05
3. A new high-temperature thermal sensor based on large-grain polysilicon on insulator;Sensors and Actuators A: Physical;2006-08
4. An analytical two-dimensional model for circular spreading-resistance temperature sensor based on thin silicon film;Solid-State Electronics;2005-01
5. Dilute Aluminium Concentration in 4H-SiC: from SIMS to LTPL Measurements;Materials Science Forum;2004-06
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