Effects of Source Composition on Diffusion and Solubility of Zinc in Gallium Arsenide-Reference-Cited by-同舟云学术

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Effects of Source Composition on Diffusion and Solubility of Zinc in Gallium Arsenide

Published:1997-01 Issue: Volume:143-147 Page:1117-1124
ISSN:1662-9507
Container-title:Defect and Diffusion Forum
language:
Short-container-title:DDF

Author:

Hettwer H.-G.,Stolwijk Nicolaas¹,Mehrer Helmut²

Affiliation:

1. Westfälische Wilhelms-Universität Münster

2. Universität Münster

Publisher

Trans Tech Publications, Ltd.

Subject

Condensed Matter Physics,General Materials Science,Radiation

Link

https://www.scientific.net/DDF.143-147.1117.pdf

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Diffusion and Defect Phenomena in III-V Semiconductors and their Investigation by Transmission Electron Microscopy;Diffusion Foundations;2018-07

2. Effects of the composition of diffusion source on the surface concentration and effective surface diffusivity of Zn in n-GaSb;Journal of Materials Science;2016-05-03

3. Zinc Doping Profile in AlGaAs/GaAs Heteroepitaxial Structures Grown by Metalorganic Chemical Vapor Deposition;Inorganic Materials;2004-08

4. Diffusion of zinc in gallium phosphide under defect-free phosphorus-rich conditions;Physica B: Condensed Matter;2001-12

5. gallium arsenide (GaAs), diffusion of Zn in GaAs;Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part b: Group IV-IV and III-V Compounds.

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