Tunneling Properties in GaAs/Al0.33Ga0.67As/InxGa1-xAs Double-Barrier Resonant Tunneling Structures

Abstract

We study the tunneling properties in GaAs/Al0.33Ga0.67As/InxGa1-xAs (x=0~0.05) double-barrier resonant tunneling structures. On increasing bias voltage, the behavior of current density for x=0 can be explained by the interplay between the increase of the supply function of available electrons and the decrease of transmission coefficient through device area. On increasing the Indium content from 0, the peak current density decreases, and the reason is that both the supply function and the transmission coefficient decreases. At zero bias, the structure is on resonance with the lowest x value of 0.02.