Effects of the Substrates Temperatue and Argon Oxygen Ratio on ZnO Thin Films

Abstract

Abstract. Using the radio frequency reactive magnetron sputtering technique, ZnO and Al-dopped ZnO thin films were fabricated on glass substrate by changing the Ar/O2ratio and substrate temperature. The film crystallinity、optical properties and surface morphology were investigated by X-ray diffraction、 UV - visible spectrophotometer and scanning electron microscopy (SEM). The XRD results showed that by changing the argon oxygen ratio, Al-dopped ZnO films deposited at sputtering power of 40W and room temperature for 1 hour sputtering time showed no significant peaks, suggesting that the film growth was amorphous. UV-Vis spectrophotometer at 400nm wavelength test showed less than 90% light transmission rate. When substrate temperature was increased to 200 ° C, significant (002) diffraction peak and transmittance of 88% or more in the 400 ~ 800nm wavelength range appeared. A minimum XRD diffraction peak FWHM was found at substrate temperature of 300 ° C. TEM showed well crystal growth with maximum grain size at 300 ° C, XRD showed that there are only (101) peaks ,no (002) peaks in Al- doped ZnO.