The Effect of N Vacancy on GaN Doped by Fe

Author:

Wang Yu Feng1,Yang Chong1,Guo Ting Ting1

Affiliation:

1. Beihang University

Abstract

Using general graduated approximation (GGA) of the ab-initio based on density functional theory (DFT), three models of possible double Fe doping GaN and three models of possible N vacancy and double Fe codoping GaN were calculated. The results show that in the three models of double Fe doping GaN, the energies of antiferromagnetism (AFM) are lower than the ones of ferromagnetism (FM), which shows that the ground state of Fe doping GaN will be AFM, this agrees on the conclusion of literature [15]. After adding vacancies 2 and 3 respectively, we found a ferrimagnetic (FIM) ground state. But after adding vacancy 1, the ground state was still AFM.

Publisher

Trans Tech Publications, Ltd.

Subject

General Engineering

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