Multi-Resolution Analysis of Critical Dimension Line Edge Roughness-Reference-Cited by-同舟云学术

Multi-Resolution Analysis of Critical Dimension Line Edge Roughness

Published:2012-02 Issue: Volume:472-475 Page:2436-2443
ISSN:1662-8985
Container-title:Advanced Materials Research
language:
Short-container-title:AMR

Author:

Yang Yan Zhu¹,Zhu Wei²,Li Hong Bo³,Zhao Xue Tao⁴

Affiliation:

1. Donghua University

2. Beijing Institute of Technology

3. Chinese institute of metering and measurement

4. Shandong University of Technology

Abstract

A representation method for line edge roughness (LER) parameters based on wavelet-analysis is proposed. Multi-resolution analysis is processed on both spatial features and frequency features of line edge. Different feature details are achieved with different analysis resolution. The features of line edge are able to be represented well by wavelet analysis. And an extraction method for contour line of LER is designed based on wavelet baseline. The experimental results show that more details of LER features are obtained by multi-resolution wavelet analysis. The method is feasible to estimate the nano-scale LER. Therefore, it is possible to reduce the processing errors of nano-scale manufacturing line.

Publisher

Trans Tech Publications, Ltd.

Subject

General Engineering

Link

https://www.scientific.net/AMR.472-475.2436.pdf

Reference8 articles.

1. ITRS[EB/OL], http: /public. itrs. net , (2004).

2. Hongbo Li, Xuezeng Zhao etc. Line-edge-roughness measurement of critical-dimensions in semiconductor fabrication industry. Journal of Harbin Institute of Technology. Vol. 5(2005): pp.674-678. In Chinese.

3. Jangho Shin. Line-edge roughness study of next-generation lithography: Carbon nanotubes application to sub-hundred nanometer pattern metrology [D]. Doctor philosophy. University of Wisconsin-madison. 2003: 12-16.

4. http: /www. semiconductorfabtech. com/journals/edition. 18.

5. Bryan et al, Effects Processing Parameter on Line Edge Roughness [A]. Advances in Resist Technology and Processing XX, Theodore H, Fedynyshyn, Editor, Proceedings of SPIE[C] Vol. 5039(2003): 384-392.