A Threshold Voltage Simulation of Hydrogen-Terminated Diamond MESFETs-Reference-Cited by-同舟云学术

A Threshold Voltage Simulation of Hydrogen-Terminated Diamond MESFETs

Published:2012-02 Issue: Volume:482-484 Page:1093-1096
ISSN:1662-8985
Container-title:Advanced Materials Research
language:
Short-container-title:AMR

Author:

Zhuang Xiao Feng¹,Zeng Qing Kai¹,Ren Bing¹,Wang Zhen Hua¹,Zhang Yue Lu¹,Shen Li Ya¹,Bi Mei¹,Huang Jian¹,Tang Ke¹,Shi Ling Yun¹,Xia Yi Ben¹,Wang Lin Jun¹

Affiliation:

1. Shanghai University

Abstract

In this paper, the threshold voltage of diamond film-based metal-semiconductor field effect transistors (MESFETs) has been simulated using Silvaco TCAD tools. The drain current (Id) versus gate voltage (Vg) relationship, and the distribution of acceptors in diamond surface conduction layer were also investigated. From the simulation results, it was found that the gate length contributed the most to the threshold voltage, while the doping depth almost had no impact on the threshold voltage value.

Publisher

Trans Tech Publications, Ltd.

Subject

General Engineering

Link

https://www.scientific.net/AMR.482-484.1093.pdf

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