Affiliation:
1. North China Electric Power University
2. Lanzhou University
3. Kyungsung University
Abstract
The Cu thin films were deposited on P type Si (111) substrates by ionized cluster beam (ICB) technique. The surface morphology and roughness of Cu thin films were studied at different deposition condition by atomic force microscopy (AFM). The results show that the average grain size and surface roughness of the Cu thin films deposited at an acceleration voltage of 3 kV is smaller than other conditions.
Publisher
Trans Tech Publications, Ltd.
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