Improving Forward Current Characteristics of Diode by X-Ray Irradiation-Reference-Cited by-同舟云学术

Improving Forward Current Characteristics of Diode by X-Ray Irradiation

Published:2012-01 Issue: Volume:433-440 Page:6713-6716
ISSN:1662-8985
Container-title:Advanced Materials Research
language:
Short-container-title:AMR

Author:

Niemcharoen Surasak¹,Srithanachai Itsara¹,Ueamanapong Surada¹,Poyai Amporn²

Affiliation:

1. King Mongkut’s Institute of Technology Ladkrabang

2. Thai Microelectronics Center (TMEC)

Abstract

These papers investigates the effect of X-ray on forward current characteristics of diode. The forward current of diode after X-ray irradiation energy 40 keV at the exposure time ranging 5, 10 second was increased, while 15 and 20 second was decreased. X-ray causes changing of the electrical characteristics of diode. Series resistance is the main factor for analyze on forward current characteristics. From the results, X-ray can improve performance of diode at the exposure time for 5 and 10 second.

Publisher

Trans Tech Publications, Ltd.

Subject

General Engineering

Link

https://www.scientific.net/AMR.433-440.6713.pdf

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