Affiliation:
1. Korea Institute of Industrial Technology
Abstract
As the electrodeposition reaction is a heterogeneous reaction including both material
transfer and electrochemical reaction, this study tries to find out the reaction mechanism about Ag
electrodepostion used as semiconductor interconnection using rotating disk electrode system (RDE
system). Considering the environmental problem, non-cyanide Ag electrodeposition solution has
been carried out. With varying the process conditions of a certain range including the rotating speed
of RDE, applied voltage, and temperature etc., obtained the electrodeposition rate of Ag according
to the reaction time. The rate determining step was clarified with the activation energy(Ea) of the
electrodeposition reactions for the each process conditions estimated from Arrhenius Plot.
Activation energy of Ag in the temperature range between 18°C and 32°C was 3.2kcal/mole. The
electrodeposition rate of Ag seems to be controlled mass transport. With the electrodepositon
solution mentioned above, the characteristics of silver thin film and bottom-up filling capability
were investigated by DC or pulsed electrodeposition method. Especially, the effects of additives on
the properties of bottom-up filling of Ag were studied.
Publisher
Trans Tech Publications, Ltd.
Cited by
1 articles.
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