Electrical Characteristics and Microstructures of Eu2O3-Doped Bi4Ti3O12 Thin Films

Abstract

Eu2O3-doped bismuth titanate (Bi4-xEuxTi3O12: BET) thin films with random oriention were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique, and the structures and ferroelectric properties of the films were investigated. XRD studies indicated that all of BET films consisted of single phase of a bismuth-layered structure with well-developed rod-like grains. The remanent polarization ( Pr) and coercive field (Ec) of the BET Film with x=0.8 were 20μC/cm2and 65KV/cm , respectively. After 3×1010switching cycles, 15% degradation of Pris observed in the film.