Structural and Electrical Properties of Rare Earth/ Ferrites: Studied for Resistive Switching Device Application

Abstract

The storage of large amount of data is a global challenge. Nonvolatile memory devices have been the recent focus of researchers because data is retained after removing power supply in these devices. Resistive random-access memory device has large storage density and it works on high operation speed, so this has motivated me to work on resistive switching device. The nanocrystalline material of general formula Gd2O3 has been synthesized by simplified sol-gel process and CoFe1.9Ce0.1O4 has been synthesized by coprecipitation process. Gd2O3 samples were calcinated at 500 °C for 2 hours and CoFe1.9Ce0.1O4 samples were calcinated at 600 °C for 2 hours and the pellets were sintered at 630 °C for 3 hours. The nanocomposite of general formula (x)Gd2O3 +(1-x) CoFe1.9Ce0.1O4 with x=0,0.3 has been synthesized by wet chemical method. X-ray diffraction technique has been done for structural analysis which confirms the cubic structure of CoFe1.9Ce0.1O4 material. AC conductivity has increased with increased frequency of this sample. This sample with 0.1 concentration of Cerium has good resistive switching properties. (x)Gd2O3 +(1-x) CoFe1.9Ce0.1O4 sample shows increased conductivity hence switching mechanism further enhances from CoFe1.9Ce0.1O4 sample so it is a potential candidate for resistive switching device application.