Optical Properties of GaAs Nanoparticles in Acetone by Laser Ablation

Abstract

Gallium arsenide (GaAs) nanoparticles' optical and emission properties can be tuned bychanging their size across the visible spectrum. GaAs nanoparticles' optical characteristics aredegraded by oxidation on their surface. This work investigated the optical constants and the opticalband gap for a GaAs nanoparticle immersed in acetone using the laser ablation into liquids (LAL)technique after being exposed to a Nd: YAG pulsed laser operating at the wavelength (1064nm)10Hz frequency, and 7ns pulse width for a fixed flounce of 1.32 J/cm2, and the time of ablationwas 5 minutes. In order to calculate the optical conductivity (σ), refractive index (n), extinctioncoefficient (k), dielectric constant, absorption coefficient (α), and optical band gap, an opticalinvestigation was carried out utilizing a UV-Visible Spectrophotometer region in the wavelengthrange 300-1200 nm. The band gap energy was determined to be 3.8 eV, which is greater than thebulk Ga energy. The band gap energy of nanoparticles increases with increasing laser pulse energyand decreases with increasing pulse repetition rate. Transmission spectra increased as wavelengthsincreased, while optical absorption coefficients, extinction coefficients, and refractive coefficientsdecreased. The difference in optical constants is explained by defect states and the average bandenergy of the system. The acetone stability test reveals a peak at -0.69 mV, indicating low stabilityin nanoparticles.