Techniques for Minimizing the Basal Plane Dislocation Density in SiC Epilayers to Reduce V<sub>f</sub> Drift in SiC Bipolar Power Devices-Reference-Cited by-同舟云学术

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Techniques for Minimizing the Basal Plane Dislocation Density in SiC Epilayers to Reduce V_f Drift in SiC Bipolar Power Devices

Published:2006-10-15 Issue: Volume: Page:141-146
ISSN:0255-5476
Container-title:Silicon Carbide and Related Materials 2005
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Author:

Sumakeris Joseph J.,Bergman J.Peder,Das Mrinal K.,Hallin Christer,Hull Brett A.,Janzén Erik,Lendenmann H.,O'Loughlin Michael J.,Paisley Michael J.,Ha Seo Young,Skowronski Marek,Palmour John,Carter Jr. Calvin H.

Publisher

Trans Tech Publications Ltd.

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. SiC MOSFETs robustness for diode-less applications;EPE Journal;2018-04-02

2. Evolution of Deep Defect Centers in Semi-Insulating 4H-SiC Substrates under High-Temperature Annealing;Journal of Electronic Materials;2008-12-23

3. Evolution of Drift-Free, High Power 4H-SiC PiN Diodes;Materials Science Forum;2006-10

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