Affiliation:
1. University Federico II
2. Hitachi Energy
Abstract
In this work a groundbreaking SiC power MOSFET based on innovative vertical Gate All Around (GAA) concept is presented. Extensive TCAD simulations are performed to analyze the performance in forward as well as in reverse conditions for this new device concept. The proposed design has a target rating voltage of 1200V, suitable for e-mobility applications.
Publisher
Trans Tech Publications, Ltd.
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