Abstract
Pattern collapse in CMOS image sensors is discussed, where silicon pillars are separated by trenches of few microns deep. Both analytical and numerical models are given and match experimental results. The trench profile is also taken into account to predict such collapse.
Publisher
Trans Tech Publications, Ltd.
Subject
Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics
Reference11 articles.
1. T. Tanaka, Japanese journal of applied physics, 32(Part 1, N°12B), 6059-6064 (1993).
2. I. Vos, ECS Trans., 41(5) 189-196 (2011).
3. S.S. Iyer, IEDM Proceedings, p.33.1.1-33.1.4 (2012).
4. A. Tournier, Pixel-to-Pixel isolation by Deep Trench technology: Application to CMOS Image Sensor, IISW (2011).
5. B. Wu, J. Appl. Phys., 108, 051101 (2010).