High Single-Event Burnout Resistance 1.2 kV 4H-SiC Schottky Barrier Diode

Abstract

A 1.2 kV lateral RESURF Schottky diode (TZ-SBD) have been designed from SZ-SBD that can recover from a single-event effect (SEE) in which a heavy ion traverses the device at a linear energy transfer (LET) of 60 MeV·cm²/mg, ESA’s standard. Compared to SZ-SBD, TZ-SBD has an additional split in the N-drift region which is usually used to improve the electric field distribution so its breakdown voltage is improved by 9%. During the single events simulations, the maximum temperature is 919 K with reverse voltage (VR) = 1200 V and LET = 60 MeV·cm²/mg, which is much lower then the SiC melting temperature (3100 K) and the chemically unstable temperature of SiC in the presence of metal (1073 K).