Berry phase appearance in deformed indium antimonide and gallium antimonide whiskers-Reference-Cited by-同舟云学术

Berry phase appearance in deformed indium antimonide and gallium antimonide whiskers

Published:2019-11-10 Issue:2 Volume:9 Page:22-27
ISSN:2224-0977
Container-title:Computational Problems of Electrical Engineering
language:
Short-container-title:Comput. probl. electr. eng.

Author:

Druzhynin Anatoliy^ORCID, ,Ostrovskyi Ihor^ORCID,Khoverko Yuriy^ORCID,Liakh-Kaguy Natalia^ORCID, , ,

Abstract

The influence of deformation on magnetoresistance features in indium antimonide and gallium antimonide whiskers of n-type conductivity with different doping concentration in the vicinity to the metal-insulator transition (MIT) has been investigated in the temperature range 4.2 – 50 K and the magnetic field 0 – 14 T. The Shubnikov-de Haas oscillations in the whole range of magnetic field inductions have been shown in deformed and undeformed whiskers. The amplitude of the magnetoresistance oscillations for both type of samples decreases in accordance with the increase in temperature. Berry phase existence under deformation influence has been also revealed at low temperatures in the indium antimonide and galium antimonide whiskers, that indicates their transition into the state of topological insulators.

Publisher

Lviv Polytechnic National University

Subject

General Medicine

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