High-Frequency GaN HEMTs Based Point-of-Load Synchronous Buck Converter with Zero-Voltage Switching-Reference-Cited by-同舟云学术

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High-Frequency GaN HEMTs Based Point-of-Load Synchronous Buck Converter with Zero-Voltage Switching

Published:2017-05-20 Issue:3 Volume:17 Page:601-609
ISSN:1598-2092
Container-title:Journal of Power Electronics
language:en
Short-container-title:Journal of Power Electronics

Author:

Lee Woongkul,Han Di,Morris Casey T.,Sarlioglu Bulent

Publisher

The Korean Institute of Power Electronics

Subject

Electrical and Electronic Engineering,Control and Systems Engineering

Link

http://ocean.kisti.re.kr/downfile/crosscheck/kipe/JAKO201718054814148.pdf

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of Source–Drain Opposite Side Gate on the AlGaN/GaN High Electron Mobility Transistor Devices;physica status solidi (a);2023-07-06

2. On-Chip GaN Planar Transformer Design for Highly Integrated RF Systems;Journal of Circuits, Systems and Computers;2022-12-08

3. Circuit Models of Power MOSFETs Leading the Way of GaN HEMT Modelling—A Review;Energies;2022-05-07

4. Soft switching high step-down series-capacitor based converter with coupled-inductor technique;Journal of Power Electronics;2020-05-07

5. Performance evaluation of GaN FET-based matrix converters with dv/dt filters for variable frequency drive applications;Journal of Power Electronics;2020-03-13

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