Effect of Types of Ga/Si(111) Reconstructed Structure on Growth Morphology of GaSb Island-Reference-Cited by-同舟云学术

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Effect of Types of Ga/Si(111) Reconstructed Structure on Growth Morphology of GaSb Island

Published:2013 Issue:0 Volume:1 Page:011001-011001
ISSN:2758-2450
Container-title:JJAP Conference Proceedings
language:en
Short-container-title:JJAP Conf. Proc.

Author:

Machida Ryuto¹,Toda Ryusuke¹,Yoshiki Keisuke¹,Hara Shinsuke¹,Irokawa Katsumi²,Miki Hirofumi²,Kawazu Akira³,I. Fujishiro Hiroki¹

Affiliation:

1. Faculty of Industrial Science and Technology, Tokyo University of Science, Noda, Chiba 278-8510, Japan

2. Faculty of Science and Technology, Tokyo University of Science, Noda, Chiba 278-8510, Japan

3. Faculty of Science and Engineering, Tokyo Denki University, Hatoyama, Saitama 350-0394, Japan

Publisher

The Japan Society of Applied Physics

Link

https://www.jstage.jst.go.jp/article/jjapcp/1/0/1_011001/_pdf

Reference18 articles.

1. T. Tatsumi, K. Tanabe, K. Watanabe, S. Iwamoto, and Y. Arakawa: J. Appl. Phys. 112 (2012) 033107. http://dx.doi.org/10.1063/1.4742198

2. A. Lee, Q. Jiang, M. Tang, A. Seeds, and H. Liu: Opt. Express 20 (2012) 22181. http://dx.doi.org/10.1364/OE.20.022181

3. G. Balakrishnan, A. Jallipalli, P. Rotella, S. Huang, A. Khoshakhlagh, A. Amtout, S. Krishna, L. R. Dawson, and D. L. Huffaker: IEEE J. Sel. Top. Quantum Electron. 12 (2006) 1636. http://dx.doi.org/10.1109/JSTQE.2006.885342

4. M. Jo, K. Ishida, N. Yasuhara, Y. Sugawara, K. Kawamoto, and S. Fukatsu: Appl. Phys. Lett. 86 (2005) 103509. http://dx.doi.org/10.1063/1.1882757

5. Y. Nakamura, T. Miwa, and M. Ichikawa: Nanotechnology 22 (2011) 265301. http://dx.doi.org/10.1088/0957-4484/22/26/265301

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