Ion channeling measurements of β-FeSi<sub>2</sub> films epitaxially grown on Si(111) and their analysis by multiple scattering theory-Reference-Cited by-同舟云学术

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Ion channeling measurements of β-FeSi<sub>2</sub> films epitaxially grown on Si(111) and their analysis by multiple scattering theory

Published:2017 Issue:0 Volume:5 Page:011104-011104
ISSN:2758-2450
Container-title:JJAP Conference Proceedings
language:en
Short-container-title:JJAP Conf. Proc.

Author:

Fuchi Masaya¹,Arima Mikihiro¹,Narumi Kazumasa²,Terai Yoshikazu¹,Maeda Yoshihito¹

Affiliation:

1. Department of Computer Science and Electronics, Kyushu Institute of Technology, Fukuoka 820-8502, Japan

2. National Institutes for Quantum and Radiological Science and Technology (QST), Takasaki, Gunma 370-1292, Japan

Publisher

The Japan Society of Applied Physics

Link

https://www.jstage.jst.go.jp/article/jjapcp/5/0/5_011104/_pdf

Reference7 articles.

1. A. L. Vázquez de Parga, J. dela Figuera, J. E. Prieto, C. Ocal, and R. Miranda, Appl. Phys. A 57, 477 (1993). https://doi.org/10.1007/BF00331745

2. For example, see [http://home.mpcdf.mpg.de/~mam/]. http://home.mpcdf.mpg.de/~mam/

3. Y. Maeda, K. Narumi, S. Sakai, Y. Terai, K. Hamaya, T. Sadoh, and M. Miyao, Thin Solid Films 519, 8461 (2011). https://doi.org/10.1016/j.tsf.2011.05.024

4. D. S. Gemmell, Rev. Mod. Phys. 46, 129 (1974). https://doi.org/10.1103/RevModPhys.46.129

5. W. Chu, J. Mayer, and M. Nicolet, Backscattering Spectrometry (Academic Press, New York, 1978) p. 243.

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