Effect of beam flux on radiation damage accumulation in ion-bombarded Si-Reference-Cited by-同舟云学术

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Effect of beam flux on radiation damage accumulation in ion-bombarded Si

Published:2018 Issue:0 Volume:7 Page:011101-011101
ISSN:2758-2450
Container-title:JJAP Conference Proceedings
language:en
Short-container-title:JJAP Conf. Proc.

Author:

Minagawa Hideaki¹,Nakanishi Shunsuke¹,Maekawa Masaki²,Kawasuso Atsuo²,Tsuchida Hidetsugu³

Affiliation:

1. Department of Nuclear Engineering, Kyoto University, Nishikyo, Kyoto 615-8530, Japan

2. National Institute for Quantum and Radiological Science and Technology (QST), Takasaki, Gumma 370-1292, Japan

3. Quantum Science and Engineering Center, Kyoto University, Uji, Kyoto 611-0011, Japan

Publisher

The Japan Society of Applied Physics

Link

https://www.jstage.jst.go.jp/article/jjapcp/7/0/7_011101/_pdf

Reference17 articles.

1. R. Wolfe and C. J. Kriessman, Applied Solid State Science: Advances in Materials and Device Research (Academic Press, New York, 1969).

2. M. T. Myers, S. Charnvanichborikarn, L. Shao, and S. O. Kucheyev, Phys. Rev. Lett. 109, 095502 (2012). https://doi.org/10.1103/PhysRevLett.109.095502

3. G. Carter, J. Appl. Phys. 79, 8285 (1996). https://doi.org/10.1063/1.362468

4. A. Hallén, D. Fenyö, B. U. R. Sundqvist, R. E. Johnson, and B. G. Svensson, J. Appl. Phys. 70, 3025 (1991). https://doi.org/10.1063/1.349333

5. A. I. Titov and G. Carter, Nucl. Instrum. Methods Phys. Res., Sect. B 119, 491 (1996). https://doi.org/10.1016/S0168-583X(96)00353-9

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