Effect on the GaAs parameters of a photoconductive semiconductor switch with a silicon oxide layer when switched by 355-nm laser radiation

Abstract

The effect of defects in a silicon oxide (SiO2) layer deposited by sputtering on the front side of a GaAs photoconductive semiconductor switch (PCSS) on its resistance in the open state was found. Switching of the PCSS was carried out by a laser pulse with duration of 5 ns with a wavelength of 355 nm on the reverse side of the PCSS. The effect is to reduce the required electric field for breakdown in the nonlinear mode and increase the resistance in the open state. With an increase in the electric field strength applied to the PCSS with SiO2, an increase in resistance is observed to a threshold value, after which a sharp decrease occurs to a value comparable to the resistances without an oxide layer.