Abstract
The paper considers two schemes for detecting nanosecond high-power microwave pulses by detectors on hot carriers, with the source of the bias voltage pulse located near the detector and at a distance. The corresponding detector calibration schemes are analyzed.
Reference4 articles.
1. [1] Benford J., Swegle J.A., Shamiloglu E., High power microwaves. (Oxford: Taylor & Francis Group, 2016).
2. [2] Dagys M., Kancleris Z., Simniskis R., Schamiloglu E., IEEE Ant. Prop. Mag., 43(5), 64, 2001; doi: 10.1109/74.979368
3. [3] Belousov V.I., Zelentsov V.I., Ofitserov M.M., Rayzer M.D. Tsopp L.E., Relyativistskaya vysokochastotnaya elektronika. (Gor'kij: IPF AN SSSR, 1979).
4. [4] Klimov A.I., Eksperimental'nye metody v sil'notochnoj elektronike. (Tomsk: TPU, 2013).