Device simulation of negative-capacitance field-effect transistors with a uniaxial ferroelectric gate insulator-Reference-Cited by-同舟云学术

Device simulation of negative-capacitance field-effect transistors with a uniaxial ferroelectric gate insulator

Published:2020 Issue:2 Volume:11 Page:145-156
ISSN:2185-4106
Container-title:Nonlinear Theory and Its Applications, IEICE
language:en
Short-container-title:NOLTA

Author:

Hattori Junichi¹^ORCID,Ikegami Tsutomu¹^ORCID,Fukuda Koichi¹^ORCID,Ota Hiroyuki¹^ORCID,Migita Shinji¹^ORCID,Asai Hidehiro¹^ORCID

Affiliation:

1. National Institute of Advanced Industrial Science and Technology (AIST)

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Rehabilitation,Physical Therapy, Sports Therapy and Rehabilitation,General Medicine

Link

https://www.jstage.jst.go.jp/article/nolta/11/2/11_145/_pdf

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