Transient thermal network model identification for power module packages
Author:
Affiliation:
1. Osaka Univ., Div. of Electrical, Electronic and Information Eng., Graduate school of Eng.
Publisher
Institute of Electronics, Information and Communications Engineers (IEICE)
Subject
Rehabilitation,Physical Therapy, Sports Therapy and Rehabilitation,General Medicine
Link
https://www.jstage.jst.go.jp/article/nolta/11/2/11_157/_pdf
Reference29 articles.
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2. [2] T. Funaki and H. Inoue, et al., “Characterization of SiC power module for high switching frequency operation,” IEICE Electronics Express, vol. 7, no. 14, pp. 1008-1013, July 2010.
3. [3] J. Millam and P. Godignon, et al., “A survey of wide bandgap power semiconductor devices,” IEEE Transactions on Power Electronics, vol. 29, no. 5, pp. 2155-2163, May 2014.
4. [4] H.A. Mantooth and M.D. Glover, et al., “Wide bandgap technologies and their implications on miniaturizing power electronic systems,” IEEE Journal of Emerging and Selected Topics in Power Electronics, vol. 2, no. 3, pp. 374-385, September 2014.
5. [5] T. Kimoto and J.A. Cooper, Fundamentals of silicon carbide technology: Growth, characterization, devices, and applications, Wiley-IEEE Press, November 2014.
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