Design of load-independent class-E inverter with MOSFET gate-to-drain and drain-to-source parasitic capacitances
Author:
Affiliation:
1. Department of Electrical and Electronic Engineering, Chiba Institute of Technology
2. Graduate School of Advanced Integration Science, Chiba University
Publisher
Institute of Electronics, Information and Communications Engineers (IEICE)
Subject
Rehabilitation,Physical Therapy, Sports Therapy and Rehabilitation,General Medicine
Link
https://www.jstage.jst.go.jp/article/nolta/11/2/11_267/_pdf
Reference32 articles.
1. [1] N.O. Sokal and A.D. Sokal, “Class E—A new class of high efficiency tuned single-ended switching power amplifier,” IEEE J. Solid-State Circuits, vol. SC-10, no. 3, pp. 168-176, June 1975.
2. [2] F.H. Raab, “Effects of circuit variations on the class-E tuned power amplifier,” IEEE J. Solid-State Circuits, vol. SC-13, no. 2, pp. 239-247, April 1978.
3. [3] M.K. Kazimierczuk, “Class E tuned power amplifier with shunt inductor,” IEEE J. Solid-State Circuits, vol. SC-16, no. 1, pp. 2-7, February 1981.
4. [4] M.K. Kazimierczuk, “Effects of the collector current fall time on the class E tuned power amplifier,” IEEE J. Solid-State Circuits, vol. SC-18, no. 2, pp. 181-193, April 1983.
5. [5] M.K. Kazimierczuk, “Collector amplitude modulation of the class E tuned power amplifier,” IEEE Trans. Circuits Syst., vol. CAS-31, no. 6, pp. 543-549, June 1984.
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