Multi-column parallel QC-LDPC decoder architecture for NAND flash memory
Author:
Affiliation:
1. School of Electrical Science and Engineering, Nanjing University
2. Microelectronics R&D Institute, ZTE Corporation
3. Shenzhen Research Institute, Nanjing University
Publisher
Institute of Electronics, Information and Communications Engineers (IEICE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://www.jstage.jst.go.jp/article/elex/15/10/15_15.20180397/_pdf
Reference11 articles.
1. [1] G. Dong, et al.: “Using data postcompensation and predistortion to tolerate cell-to-cell interference in MLC NAND flash memory,” IEEE Trans. Circuits Syst. I, Reg. Papers 57 (2010) 2718 (DOI: 10.1109/TCSI.2010.2046966).
2. [2] K. Kim: “Technology for sub-50 nm DRAM and NAND flash manufacturing,” IEEE International Electron Devices Meeting, 2005. IEDM Technical Digest (2005) 323 (DOI: 10.1109/IEDM.2005.1609340).
3. [3] J. Li, et al.: “Realizing unequal error correction for NAND flash memory at minimal read latency overhead,” IIEEE Trans. Circuits Syst. II, Exp. Briefs 61 (2014) 354 (DOI: 10.1109/TCSII.2014.2312640).
4. [4] R. Gallager: “Low-density parity-check codes,” IRE Trans. Inf. Theory 8 (1962) 21 (DOI: 10.1109/TIT.1962.1057683).
5. [5] M. P. C. Fossorier, et al.: “Reduced complexity iterative decoding of low-density parity check codes based on belief propagation,” IEEE Trans. Commun. 47 (1999) 673 (DOI: 10.1109/26.768759).
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