A 1.2 V supply 0.58 ppm/°C CMOS bandgap voltage reference-Reference-Cited by-同舟云学术

A 1.2 V supply 0.58 ppm/°C CMOS bandgap voltage reference

Published:2018 Issue:16 Volume:15 Page:20180521-20180521
ISSN:1349-2543
Container-title:IEICE Electronics Express
language:en
Short-container-title:IEICE Electron. Express

Author:

Hu Jinlong¹,Xu Huachao²,Zhang Yuanzhi³,Sun Jie¹,Du Tao²,Lu Chao³,Li Guofeng²

Affiliation:

1. Tianjin Complex System Control Theory and Application Key Laboratory, School of Electrical and Electronic Engineering, Tianjin University of Technology

2. Tianjin Key Laboratory of Optoelectronic Sensor and Sensing Network Technology, College of Electronic Information and Optical Engineering, Nankai University

3. Department of Electrical and Computer Engineering, Southern Illinois University Carbondale

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://www.jstage.jst.go.jp/article/elex/15/16/15_15.20180521/_pdf

Reference10 articles.

1. [1] K. N. Leung and P. K. T. Mok: “A sub-1-V 15-ppm/°C CMOS bandgap voltage reference without requiring low threshold voltage device,” IEEE J. Solid-State Circuits 37 (2002) 526 (DOI: 10.1109/4.991391).

2. [2] P. Malcovati, et al.: “Curvature-compensated BiCMOS bandgap with 1-V supply voltage,” IEEE J. Solid-State Circuits 36 (2001) 1076 (DOI: 10.1109/4.933463).

3. [3] K. Sanborn, et al.: “A sub-1-V low-noise bandgap voltage reference,” IEEE J. Solid-State Circuits 42 (2007) 2466 (DOI: 10.1109/JSSC.2007.907226).

4. [4] D. Ker and S. Chen: “New curvature-compensation technique for CMOS bandgap reference with sub-1-V operation,” IEEE Trans. Circuits Syst. II, Exp. Briefs 53 (2006) 667 (DOI: 10.1109/TCSII.2006.876377).

5. [5] C. M. Andreou, et al.: “A novel wide-temperature-range, 3.9 ppm/°C CMOS bandgap reference circuit,” IEEE J. Solid-State Circuits 47 (2012) 574 (DOI: 10.1109/JSSC.2011.2173267).

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