A high linearity, 8-GSa/s track-and-hold amplifier in GaAs HBT technology
Author:
Affiliation:
1. School of Microelectronics, Xidian University
2. Qurtuba University of Science and IT, D.I. KPK
Publisher
Institute of Electronics, Information and Communications Engineers (IEICE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://www.jstage.jst.go.jp/article/elex/15/23/15_15.20180946/_pdf
Reference14 articles.
1. [1] Q. Liu, et al.: “A 1 GS/s 11 bit SAR-assisted pipeline ADC with 59 dB SNDR in 65 nm CMOS,” IEEE Trans. Circuits Syst. II, Exp. Briefs 65 (2018) 1164 (DOI: 10.1109/TCSII.2018.2814581).
2. [2] Y.-A. Lin, et al.: “A 27-GHz 45-dB SFDR track-and-hold amplifier using modified darlington amplifier and cascoded SEF in 0.18-µm SiGe process,” IEEE MTT-S International Microwave Symposium (IMS) (2017) 137 (DOI: 10.1109/MWSYM.2017.8058869).
3. [3] J. C. Jensen and L. E. Larson: “A broadband 10-GHz track-and-hold in Si/SiGe HBT technology,” IEEE J. Solid-State Circuits 36 (2001) 325 (DOI: 10.1109/4.910470).
4. [4] S. Shahramian, et al.: “Design methodology for a 40-GSamples/s track and hold amplifier in 0.18-µm SiGe BiCMOS technology,” IEEE J. Solid-State Circuits 41 (2006) 2233 (DOI: 10.1109/JSSC.2006.878111).
5. [5] Y.-A. Lin, et al.: “A 55-dB SFDR 16-GS/s track-and-hold amplifier in 0.18 µm SiGe using differential feedthrough cancellation technique,” IEEE MTT-S International Microwave Symposium (IMS) (2016) 1 (DOI: 10.1109/MWSYM.2016.7540037).
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Enhanced Darlington <i>f<sub>T</sub></i>-doubler Structure in a 25 GS/s Track-and-Hold Amplifier for Bandwidth Improvement;IEICE Electronics Express;2023
2. Modeling and analysis for the effects of gamma irradiation on the DC and AC performance in InGaP/GaAs SHBTs;Radiation Effects and Defects in Solids;2019-11-05
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