A 1.2 GSps, 8 bit RF DAC for multi-Nyquist applications in GaAs technology-Reference-Cited by-同舟云学术

A 1.2 GSps, 8 bit RF DAC for multi-Nyquist applications in GaAs technology

Published:2018 Issue:20 Volume:15 Page:20180773-20180773
ISSN:1349-2543
Container-title:IEICE Electronics Express
language:en
Short-container-title:IEICE Electron. Express

Author:

Zhang Yi¹²³,Li Xiaopeng¹⁴,Zhang Youtao¹⁴,Ye Qingguo¹⁴,Zhang Ying¹,Guo Yufeng¹,Gao Hao⁵

Affiliation:

1. National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology

2. State Key Laboratory of Millimeter Waves

3. JiangSu HengXin Technology Co., Ltd

4. Nanjing GuoBo Electronics Co., Ltd

5. Eindhoven University of Technology

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://www.jstage.jst.go.jp/article/elex/15/20/15_15.20180773/_pdf

Reference10 articles.

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2. [2] A. Gutierrez-Aitken, et al.: “Ultrahigh-speed direct digital synthesizer using InP DHBT technology,” IEEE J. Solid-State Circuits 37 (2002) 1115 (DOI: 10.1109/JSSC.2002.801174).

3. [3] B. Schafferer and R. Adams: “A 3 V CMOS 400 mW 14 b 1.4 GS/s DAC for multi-carrier applications,” ISSCC Dig. Tech. Papers (2004) 20.1 (DOI: 10.1109/ISSCC.2004.1332743).

4. [4] B. Oyama, et al.: “InP HBT/Si CMOS-based 13-b 1.33-Gsps digital-to-analog converter with >70-dB SFDR,” IEEE J. Solid-State Circuits 48 (2013) 2265 (DOI: 10.1109/JSSC.2013.2261191).

5. [5] M.-J. Choe, et al.: “DC-10 GHz RF digital to analog converter,” IEEE Compound Semiconductor Integrated Circuit Symposium (2011) 1 (DOI: 10.1109/CSICS.2011.6062442).

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