Impact of RF stress on the low-frequency noise in nMOSFETs-Reference-Cited by-同舟云学术

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Impact of RF stress on the low-frequency noise in nMOSFETs

Published:2021-07-25 Issue:14 Volume:18 Page:20210237-20210237
ISSN:1349-2543
Container-title:IEICE Electronics Express
language:en
Short-container-title:IEICE Electron. Express

Author:

Fu Haipeng¹,Niu Muqian¹,Yang Liping¹,Li Xuguang¹,Ma Kaixue¹

Affiliation:

1. Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology, School of Microelectronic, Tianjin University

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://www.jstage.jst.go.jp/article/elex/18/14/18_18.20210237/_pdf

Reference30 articles.

1. [1] Y. Wang, et al.: “The design of an operational amplifier with 300mA output current based on 0.18 µm CMOS process,” 2020 IEEE 20th International Conference on Communication Technology (ICCT) (2020) 1016 (DOI: 10.1109/ICCT50939.2020.9295805).

2. [2] J.-H. Tsai, “Design of a 5.3-GHz 31.3-dBm fully integrated CMOS power amplifier using folded splitting and combining architecture,” IEEE Trans. Very Large Scale Integr. (VLSI) Syst. 27 (2019) 1527 (DOI: 10.1109/TVLSI.2019.2908956).

3. [3] S. Kang, et al.: “Study on dynamic body bias controls of RF CMOS cascode power amplifier,” IEEE Microw. Wireless Compon. Lett. 28 (2018) 705 (DOI: 10.1109/LMWC.2018.2849209).

4. [4] E.A. Gutiérrez-D, et al.: “DC and 28 GHz reliability of a SOI FET technology,” IEEE J. Electron Devices Soc. 8 (2020) 385 (DOI: 10.1109/JEDS.2019.2952449).

5. [5] G.T. Sasse, et al.: “MOSFET degradation under RF stress,” IEEE Trans. Electron Devices 55 (2008) 3167 (DOI: 10.1109/TED.2008.2004650).

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