ROVN: Replica placement for distributed data system with heterogeneous memory devices

Author:

Kim Leeju1,Lee Eunji1

Affiliation:

1. School of Artificial Intelligence Convergence, Soongsil University

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference32 articles.

1. [1] M. O’Connor: “Highlights of the high-bandwidth memory (HBM) standard,” Memory Forum Workshop 3 (2014).

2. [2] S. Ghose, et al.: “Processing-in-memory: A workload-driven perspective,” IBM Journal of Research and Development 63 (2019) 3: 1 (DOI: 10.1147/jrd.2019.2934048).

3. [3] Intel Corp.: “Boost memory capacity and lower TCO in virtualized data centers,” (2021).

4. [4] Intel Corp.: “Intel optane persistent memory product brief,” (2019).

5. [5] Redis Labs: “Redis,” https://redis.io/ (2020).

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1. MM-DIRECT;The VLDB Journal;2024-03-27

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