Practically implementable high-sensitivity 10-Gbit/s avalanche photodiode using inverted p-down design

Author:

Nada Masahiro1,Chen Ming-chen1,Katsurai Hiroaki2,Nakanishi Yasuhiko1,Yoshimatsu Toshihide1,Kanda Atsushi1,Nakamura Hirotaka1,Sano Kimikazu1

Affiliation:

1. NTT Device Innovation Center, NTT Corporation, Morinosato Wakamiya

2. NTT Access Network Service Systems Laboratories, NTT Corporation

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. High-power SOA integrated EADFB laser and high-sensitivity burst-mode APD receiver toward 10G- and 25G-class long reach PON;2022 27th OptoElectronics and Communications Conference (OECC) and 2022 International Conference on Photonics in Switching and Computing (PSC);2022-07-03

2. Enhancement of Optical-Feedback Tolerance of SOA-Integrated EML (AXEL) by Introducing DBR-Type Laser;IEEE Photonics Technology Letters;2022-05-01

3. InGaAs/InAlAs SAGCMCT avalanche photodiode with high linearity and wide dynamic range;Chinese Optics Letters;2022

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