Practically implementable high-sensitivity 10-Gbit/s avalanche photodiode using inverted p-down design-Reference-Cited by-同舟云学术

Practically implementable high-sensitivity 10-Gbit/s avalanche photodiode using inverted p-down design

Published:2021-06-10 Issue:11 Volume:18 Page:20210142-20210142
ISSN:1349-2543
Container-title:IEICE Electronics Express
language:en
Short-container-title:IEICE Electron. Express

Author:

Nada Masahiro¹,Chen Ming-chen¹,Katsurai Hiroaki²,Nakanishi Yasuhiko¹,Yoshimatsu Toshihide¹,Kanda Atsushi¹,Nakamura Hirotaka¹,Sano Kimikazu¹

Affiliation:

1. NTT Device Innovation Center, NTT Corporation, Morinosato Wakamiya

2. NTT Access Network Service Systems Laboratories, NTT Corporation

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://www.jstage.jst.go.jp/article/elex/18/11/18_18.20210142/_pdf

Reference31 articles.

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2. [2] J.S. Way, et al.: “Physical layer aspects of NG-PON2 standards--part 1: optical link design,” J. Opt. Commun. Netw. 8 (2016) 33 (DOI: 10.1364/jocn.8.000033).

3. [3] K. Honda, et al.: “Wavelength adjustment of upstream signal using AMCC with power monitoring for WDM-PON in 5G mobile era,” Proc. OFC (2018) Tu3L.4 (DOI: 10.1364/ofc.2018.tu3l.4).

4. [4] D. Nesset, “PON roadmap,” J. Opt. Commun. Netw. 9 (2017) A71 (DOI: 10.1364/jocn.9.000a71).

5. [5] K. Asaka, et al.: “Standardization trends for next-generation passive optical network stage 2 (NG-PON2),” NTT Technical Review 13 (2015) 1 (DOI: 10.1109/cits.2017.8035304).

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